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Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behavior

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5 Author(s)
F. Karouta ; Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands ; E. Smalbrugge ; W. C. van der Vleuten ; S. Gaillard
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A versatile fabrication technique for GaAs-AlGaAs wet-etched mirror lasers is presented. This technique works independently of the Al concentration in the cladding layers up to a value of 70%, and it requires four photolithography steps. Ridge waveguide lasers have been successfully processed using a double heterostructure (DHS) as well as graded index separate confinement heterostructures (GRINSCH) having different quantum-well (QW) active layers. This technique is used to fabricate short-cavity lasers in GRINSCH structures having GaAs multiple-quantum-well (MQW) or bulk active layers. Laser operation was obtained in a 29-μm-long device using a 5-QW structure. Short lasers with QW active layers show a complex spectral behavior. These lasers operate at higher current densities (~20 kA/cm2) and emit light at more than one wavelength. This implies that higher order transitions are involved which is not the case when using a bulk GaAs active layer. Besides the two peaks corresponding to the n=1 and n=2 transitions, we found an intermediate peak which corresponds presumably to the forbidden transition E1-HH2

Published in:

IEEE Journal of Quantum Electronics  (Volume:34 ,  Issue: 8 )