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Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations

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10 Author(s)
Tae Geun Kim ; Semicond. Mater. Lab., Korea Inst. of Sci. & Technol., Seoul, South Korea ; Kyung Hyun Park ; Sung-Min Hwang ; Yong Kim
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GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations, n-blocking on p-substrate (VIPS), p-n-p-n blocking on n-substrate (VI(PN)nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 mm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 mm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here

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IEEE Journal of Quantum Electronics  (Volume:34 ,  Issue: 8 )