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Investigation of the magnetic field dependence of electronic and optical properties in one-side modulation-doped GaAs-Ga1-xAl xAs quantum wells

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2 Author(s)
Qu, Fanyao ; Dept. de Fisica Aplicada, Brasilia Univ., Brazil ; Morais, P.C.

The magnetic field dependence of the two-dimensional electron density, ground state energy, Fermi energy, photoluminescence transition energy, and oscillator strength are systematically studied in GaAs-Ga 1-xAlxAs one-side modulation-doped quantum wells (QW's). Coupled Schrodinger and Poisson equations are solved self-consistently by means of the extended Fang-Howard variational approach. The calculation is performed within the effective mass approximation, considering finite well barriers and assuming exchange-correlation correction of the conduction band edge. We found an oscillatory behavior, similar to the ordinary Shubnikov-De Haas oscillation, for the magnetic dependence of all properties investigated. In particular, the calculated magnetic dependence of the oscillator strength is compared with experimental data

Published in:

Quantum Electronics, IEEE Journal of  (Volume:34 ,  Issue: 8 )