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Orientation dependence of optical gain in zincblende-GaN strained-quantum-well lasers

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3 Author(s)
Ohtoshi, T. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Niwa, A. ; Kuroda, T.

Optical gains in zincblende-GaN strained-quantum-well (QW) lasers are analyzed theoretically for various crystal orientations. Valence subbands are calculated based on the 6×6 Luttinger-Kohn model. It is found that the gains in zincblende-GaN strained-QW lasers with (110) orientation are much higher than those in wurtzite-GaN lasers with (0001) orientation

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:4 ,  Issue: 3 )

Date of Publication:

May/Jun 1998

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