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InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices

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1 Author(s)
S. Nakamura ; Dept. of Res. & Dev., Nichia Chem. Ind. Ltd., Tokushima, Japan

InGaN multiquantum-well-structure (MQW) laser diodes with Al0.14Ga0.86N-GaN modulation doped strained-layer superlattice (MD-SLS) cladding layers grown on an epitaxially laterally overgrown GaN substrate was demonstrated to have a lifetime of more than 2300 h under the condition of room-temperature continuous-wave operation. The self-pulsation was observed with a frequency of 3.5 GHz. The relative intensity noise less than -145 dB/Hz was obtained even at the 6% optical feedback using the high-frequency modulation of 600 MHz. The threshold carrier density of the InGaN MQW-structure laser diodes was estimated to be 3×1019/cm3 using a carrier lifetime of 1.8 ns

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:4 ,  Issue: 3 )