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Reduced oxide charge trapping and improved hot-electron reliability in submicrometer MOS devices fabricated by titanium salicide process

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2 Author(s)
S. -T. Chang ; Hewlett-Packard Lab., Palo Alto, CA, USA ; K. Y. Chiu

The effects of the titanium salicide (self-aligned silicide) process on the reliability of very-thin-gate-oxide MOSFETs have been studied. It is shown that the titanium salicide process, as compared to the conventional poly-Si gate process, has reduced electron and hole trapping in the oxide and improved hot-electron reliability. It is shown that these phenomena are related to the reduced hydrogen content in the oxide as revealed by a secondary ion mass spectrometry (SIMS) analysis.<>

Published in:

IEEE Electron Device Letters  (Volume:9 ,  Issue: 5 )