Cart (Loading....) | Create Account
Close category search window
 

Model-adaptable MOSFET parameter-extraction method using an intermediate model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kondo, M. ; Dept. of Electron., Kyoto Univ., Japan ; Onodera, Hidetoshi ; Tamaru, K.

We present a parameter-extraction method that is applicable to many metal-oxide-semiconductor field-effect-transistor (MOSFET) models. A simple intermediate model is introduced to eliminate model dependency of parameter estimation for numerical optimization techniques. The process of the parameter estimation is decomposed into two parts: extraction of parameters of the intermediate model and transformation of the intermediate parameters into target model parameters. Only the latter part should be devised to accommodate new MOSFET models, which may be mostly identical with that for another model. We have integrated the method onto an extraction system, and verified that the method is effective for parameter extraction of major SPICE models

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:17 ,  Issue: 5 )

Date of Publication:

May 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.