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Model-adaptable MOSFET parameter-extraction method using an intermediate model

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3 Author(s)
Kondo, M. ; Dept. of Electron., Kyoto Univ., Japan ; Onodera, Hidetoshi ; Tamaru, K.

We present a parameter-extraction method that is applicable to many metal-oxide-semiconductor field-effect-transistor (MOSFET) models. A simple intermediate model is introduced to eliminate model dependency of parameter estimation for numerical optimization techniques. The process of the parameter estimation is decomposed into two parts: extraction of parameters of the intermediate model and transformation of the intermediate parameters into target model parameters. Only the latter part should be devised to accommodate new MOSFET models, which may be mostly identical with that for another model. We have integrated the method onto an extraction system, and verified that the method is effective for parameter extraction of major SPICE models

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:17 ,  Issue: 5 )