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For original paper see E. Abou-Allam and T. Manku, ibid., vol.16, pp.437-47 (1997). A comparison is provided between the recent small-signal analysis for the distributed gate resistance in MOSFET's at RF frequencies and the lumped-element model of an earlier publication for various CMOS technologies. An improved lumped-element model is also proposed. It is demonstrated that simplified lumped-element circuits are adequate for modeling the effect of distributed gate resistance on both the y parameters and the thermal noise.