Referenced Items are not available for this document.
A new physical model for characterization of the temperature dependent operation of power semiconductor devices is presented. It is based on the application of a new continuity equation for description of the carrier transport in the low doped layer of power semiconductor structures. Modern results of carrier mobility description, particularly with regard to EHS (electron hole scattering), are strictly taken into account, even the temperature conditioned effective ionization of doping atoms. The model is validated by FCA (free carrier absorption) experiments at temperatures between 100 K and 400 K
Published in:
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Date of Conference: 3-6 Jun 1998
- Page(s):
- 383 - 386
- Meeting Date :
- 03 Jun 1998-06 Jun 1998
- ISSN :
- 1063-6854
- Print ISBN:
- 0-7803-4752-8
- INSPEC Accession Number:
- 6090260
- Conference Location :
- Kyoto
- Digital Object Identifier :
- 10.1109/ISPSD.1998.702723
- Product Type:
- Conference Publications
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