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New 3-D lateral power MOSFETs with ultra low on-resistance

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8 Author(s)
Uesugi, T. ; Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan ; Kodama, M. ; Kawaji, S. ; Nakashima, K.
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This paper presents a new 3D lateral power MOSFET which has a double gate and a trench gate/drain structure. The double gate structure decreased its channel resistance, and the trench gate/drain structure decreased its n drift resistance. We realized this structure using solid phase epitaxy and a conventional trench technology. From experimental results, a breakdown voltage of 49.5 V and a specific on-resistance of 42 mΩ·mm2 were obtained

Published in:

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Date of Conference:

3-6 Jun 1998