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Anisotropic gate recess dry-etching for InGaP/InGaAs/GaAs HEMTs depending on size of active region

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3 Author(s)
Nihei, M. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Suehiro, H. ; Watanabe, Y.

The authors have investigated the dependence of the GaAs dry etching profile on the size of the active region. Anisotropy of the etching profile was improved by increasing the size of the active region from 72 to 7000 μm. By applying this phenomenon, we suppressed the side-etching and decreased the source resistance Rs of 0.15 μm gate InGaP/InGaAs/GaAs HEMTs by ~30%, resulting in a higher transconductance gm of 565 mS/mm

Published in:

Electronics Letters  (Volume:34 ,  Issue: 12 )

Date of Publication:

11 Jun 1998

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