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AlGaAs/GaAs tunnelling diode integrated with nanometre-scale oxides patterned by atomic force microscope

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5 Author(s)
Okada, Y. ; Inst. of Mater. Sci., Tsukuba Univ., Ibaraki, Japan ; Amano, S. ; Iuchi, Y. ; Kawabe, M.
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The authors have fabricated a tunnel diode comprising a two-dimensional electron gas channel formed at an AlGaAs/GaAs heterojunction by molecular beam epitaxy and nanometre-scale oxides locally generated using an atomic force microscope (AFM). The AFM-generated oxide lines have been adopted as integral parts of the device, for the first time serving as effective tunnel barriers for single electron transport

Published in:

Electronics Letters  (Volume:34 ,  Issue: 12 )