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High-temperature operation of 1.3 μm AlGaInAs strained multiple quantum well lasers

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5 Author(s)
K. Takemasa ; Optoelectron. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan ; T. Munakata ; M. Kobayashi ; H. Wada
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High-temperature operation of 1.3 μm AlGaInAs/InP strained multiple quantum well lasers is demonstrated. An excellent CW characteristic temperature of 111 K was obtained between 20 and 80°C and a record high operating temperature of 210°C was achieved with a 700 μm long laser under pulse excitation. Power reductions at a constant current with increasing temperature were also evaluated at 80°C to be -1.27 and -1.67 dB under pulse and CW excitations, respectively

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Electronics Letters  (Volume:34 ,  Issue: 12 )