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Simplified antiresonant-reflective-optical-waveguide distributed-feedback semiconductor lasers based on Al-free InGaAs-InGaAsP-InGaP materials are reported for the first time. Devices with 6.5-/spl mu/m-wide emitting apertures operate single-frequency (/spl lambda/=0.968 /spl mu/m) and single-spatial-mode to 157-mW continuous-wave output power. The full-width at half-maximum of the lateral far-field pattern is 4.5/spl deg/, in excellent agreement with theory. Relative intensity noise values as low as -154 dB/Hz are measured between 500 MHz and 8 GHz.
Date of Publication: Aug. 1998