Referenced Items are not available for this document.
Simplified antiresonant-reflective-optical-waveguide distributed-feedback semiconductor lasers based on Al-free InGaAs-InGaAsP-InGaP materials are reported for the first time. Devices with 6.5-/spl mu/m-wide emitting apertures operate single-frequency (/spl lambda/=0.968 /spl mu/m) and single-spatial-mode to 157-mW continuous-wave output power. The full-width at half-maximum of the lateral far-field pattern is 4.5/spl deg/, in excellent agreement with theory. Relative intensity noise values as low as -154 dB/Hz are measured between 500 MHz and 8 GHz.
Published in:
Photonics Technology Letters, IEEE
(Volume:10
,
Issue:
8
)
Date of Publication: Aug. 1998
- Page(s):
- 1079 - 1081
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 5976809
- Digital Object Identifier :
- 10.1109/68.701508
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug. 1998
- Sponsored by :
- IEEE Photonics Society
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