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Long-wavelength strained quantum-well lasers oscillating up to 210/spl deg/C on InGaAs ternary substrates

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8 Author(s)
Otsubo, K. ; RWCP Opt. Interconnection Fujitsu Lab., Kanagawa, Japan ; Shoji, H. ; Kusunoki, T. ; Suzuki, T.
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Long-wavelength InGaAs-InAlGaAs strained quantum-well lasers have been fabricated on In/sub 0.22/Ga/sub 0.78/As ternary substrates grown by the Bridgman method. The threshold current density and lasing wavelength at 20/spl deg/C are 245 A/cm/sup 2/ and 1.226 /spl mu/m, respectively. The device has lased up to 210/spl deg/C, which is the highest operating temperature ever reported for long-wavelength semiconductor lasers. The temperature sensitivity of the slope efficiency between 20/spl deg/C and 120/spl deg/C is only -0.0051 dB/K, showing suppressed carrier overflow owing to deep potential quantum wells. These high-temperature durabilities of this laser are fascinating features for application to optical subscriber and optical interconnection systems.

Published in:

Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 8 )

Date of Publication:

Aug. 1998

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