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Positive oxide charge from hot hole injection during channel-hot-electron stress

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2 Author(s)
Han, K.M. ; Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA ; Sah, R.L-Y.

Positive oxide charge build up (+QOT) during channel-hot-electron (CHE) stress in silicon n-channel MOS transistors from 1.0 and 0.35-μm technologies is monitored by the direct-current current-voltage (DCIV) method. Experiments demonstrated the following: (1) +QOT is located over the drain/channel junction space-charge-region, (2) threshold hole kinetic energy equals the SiO 2/Si hole barrier, φXh=4.25 eV, (3) the oxide-charging carriers near the threshold are the secondary hot holes generated by interband impact-collision and Auger-recombination of the CHEs with thermalized holes impact-generated in the n+ drain by CHEs, and (4) the smallest threshold drain acceleration voltage from interband Auger-recombination among the four intrinsic pathways is smaller than φXh by EGap-Sl, 4.25 V-1.12 V=3.13 V

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Electron Devices, IEEE Transactions on  (Volume:45 ,  Issue: 7 )