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Computationally efficient models for quantization effects in MOS electron and hole accumulation layers

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8 Author(s)
Hareland, S.A. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Manassian, M. ; Wei-kai Shih ; Jallepalli, S.
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In this paper, models appropriate for device simulators are developed which account for the quantum mechanical nature of accumulated regions. Accumulation layer quantization is important in deep submicron (⩽0.25 μm) MOS devices in the overlapped source/drain extension regions, in accumulation mode SOI devices, and in buried-channel PMOS structures. Computationally efficient models suitable for routine device simulation are presented that predict the reduction of the accumulated net electron (hole) sheet charge when quantization of the electron (hole) accumulation region is accounted for. The results of comparisons with self-consistent simulations support the validity of these models. In addition, simulation results will be shown which illustrate that when inversion layer quantum mechanical effects are modeled, it is also necessary to account for accumulation layer quantum mechanical effects in order to obtain more physically accurate as well as numerically stable solutions

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Electron Devices, IEEE Transactions on  (Volume:45 ,  Issue: 7 )