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A self-aligned gate GaAs MESFET with p-pocket layers for high-efficiency linear power amplifiers

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6 Author(s)
Nishihori, Kazuya ; Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan ; Kitaura, Y. ; Hirose, M. ; Mihara, M.
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This paper describes a newly developed GaAs metal semiconductor field-effect transistor (MESFET)-termed p-pocket MESFET-for use as a linear power amplifier in personal handy-phone systems. Conventional buried p-layer technology, the primary technology for microwave GaAs power MESFET's, has a drawback of low power efficiency for linear power applications. The low power efficiency of the buried p-layer MESFET is ascribed to the I-V kink which is caused by holes collected in the buried p-layer under the channel. In order to overcome this problem, we have developed the self-aligned gate p-pocket MESFET which incorporates p-layers not under the channel but under the source and drain regions. This new MESFET exhibited high transconductance and uniform threshold voltage. The problematic I-V kink was successfully removed and an improved power efficiency of 48% was achieved under bias conditions, which resulted in adjacent channel leakage power at 600-kHz offset as low as -59 dBc for 1.9-GHz π/4-shift QPSK modulated input

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Electron Devices, IEEE Transactions on  (Volume:45 ,  Issue: 7 )