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A sub-nanosecond resonant-type monolithic T/R switch for millimeter-wave systems applications

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5 Author(s)
Madihian, M. ; Wireless Network Technol. Group, NEC Corp., Kawasaki, Japan ; Desclos, L. ; Maruhashi, K. ; Onda, K.
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This paper is concerned with the design consideration, fabrication process, and performance of a V-band monolithic transmit/receive (T/R) switch for millimeter-wave wireless networks applications. The developed switch integrated circuit (IC) has a novel structure in which to pass a signal, it presents a parallel resonant circuit to the signal by forward biasing a pair of switching heterojunction FET's (HJFETs), but to block the signal, it presents a series resonant circuit to the signal by reverse biasing the switching HJFETs. With a control voltage of 0/3.2 V, the developed T/R switch exhibits a minimum insertion loss of 3.9 dB, a maximum isolation of 41 dB, and a high switching speed of 250 ps, over 57-61 GHz. The monolithic T/R switch chip size is 3.3 mm×1.7 mm

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:46 ,  Issue: 7 )