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Influence of the operating temperature on the design and utilization of 94-GHz pulsed silicon IMPATT diodes

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3 Author(s)
Dalle, C. ; IEMN, CNRS, Villeneuve d''Ascq, France ; Beaussart, S. ; Friscourt, M.R.

The RF and thermal behavior of 94-GHz P/sup +/PNN/sup +/ double drift flat doping profile silicon impact ionization avalanche transit time (IMPATT) diodes for high-power pulsed operation is investigated by means of time domain electrical oscillator models. It is demonstrated that these diodes have a limited optimum temperature range of operation, associated to specific matching and bias conditions, to achieve a stable and high power operation. This restriction necessitates a thermal control when the oscillator must operate over a wide ambient temperature range. Highly doped, short active zone length diodes appear to have the best potential for high power performance.

Published in:

Electron Device Letters, IEEE  (Volume:19 ,  Issue: 7 )