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A novel process to form cobalt silicided p/sup +/ poly-Si gates by BF/sub 2//sup +/ implantation into bilayered CoSi/a-Si films and subsequent anneal

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5 Author(s)
W. K. Lai ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; H. W. Liu ; M. H. Juang ; N. C. Chen
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A novel process that implants BF/sub 2//sup +/ ions into thin bilayered CoSi/a-Si films has been shown to form cobalt silicided p/sup +/ poly-Si gates with excellent gate oxide integrity and very small flatband shift. The effects of not only using the CoSi layer as an implantation barrier but also keeping the a-Si underlayer during the initial silicide formation both significantly suppress the boron penetration through thin gate oxide.

Published in:

IEEE Electron Device Letters  (Volume:19 ,  Issue: 7 )