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A Ku-band T-shaped gate GaAs power MESFET with high breakdown voltage for satellite communications

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4 Author(s)
Jong-Lam Lee ; Pohang Univ. of Sci. & Technol., South Korea ; Haecheon Kim ; Jae Kyoung Mun ; Sung-Jae Maeng

/sup G/aAs power MESFET's with 0.5-μm T-shaped gate for Ku-band power applications have been developed using a new self-aligned and optical lithography. It displays a maximum current density of 350 mA/mm, an uniform transconductance of 150 mS/mm and a high gate-to-drain breakdown voltage of 35 V. Both the high breakdown voltage and the uniform transconductance were achieved by the new MESFET design incorporating an undoped GaAs cap and a thick lightly doped active layers. The breakdown voltage is the highest one among the values reported on the power devices. The device exhibits 0.61 W/mm power density and 47% power added efficiency with 9.0 dB associated gain at a drain bias of 12 V and an operation frequency of 12 GHz.

Published in:

IEEE Electron Device Letters  (Volume:19 ,  Issue: 7 )