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Post poly-Si gate rapid thermal nitridation for boron penetration reduction and oxide reliability improvement

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7 Author(s)

Boron penetration from p/sup +/ doped poly-Si gates in PMOSFET is greatly reduced by post poly-Si gate rapid thermal nitridation. Gate oxide reliability against boron penetration is significantly enhanced. When post poly-Si nitridation is combined with N/sub 2/O annealed gate oxides, gate oxide charge-to-breakdown is markedly improved.

Published in:

Electron Device Letters, IEEE  (Volume:19 ,  Issue: 7 )