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Low-frequency noise in AlGaN/GaN heterostructure field effect transistors

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4 Author(s)
Kuksenkov, D.V. ; Dept. of Electr. Eng., Texas Tech. Univ., Lubbock, TX, USA ; Temkin, H. ; Gaska, R. ; Yang, J.W.

We report low-frequency noise characteristics of doped-channel GaN/AlGaN heterostructure field-effect transistors grown on sapphire substrates. In the frequency range 1 Hz-100 kHz the observed noise is of the 1/f character. The Hooge constant is of the order of 10/sup -2/ and is linearly proportional to the channel width. The noise originates in the fluctuation of carrier number in the channel due to relatively high density of defects at the GaN/AlGaN heterointerface.

Published in:

Electron Device Letters, IEEE  (Volume:19 ,  Issue: 7 )