By Topic

Extraction of parasitic parameters of dummy devices on different silicon substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Chen, L.P. ; Nat. Nano Device Labs., Hsinchu, Taiwan ; Ho, Y.P. ; Lin, D.C. ; Tseng, B.M.
more authors

S-parameters of dummy devices fabricated on Si substrates with different resistivities are measured and analyzed to study the effects of substrate resistivity on the microwave characteristics. An equivalent parasitic circuit model is proposed and the extraction procedure also developed. The substrate resistivity effects can be explained well by the proposed model.

Published in:

Microwave Symposium Digest, 1998 IEEE MTT-S International  (Volume:3 )

Date of Conference:

7-12 June 1998