By Topic

X-band InGaP PHEMTs with 70% power-added efficiency

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ming-Yih Kao ; TriQuint Semicond. Inc., Dallas, TX, USA ; Beam, E.A., III ; Saunier, P. ; Frensley, W.R.

This paper describes the low-noise and power performance of InGaP/InGaAs PHEMTs lattice-matched to GaAs substrates. The 0.15-/spl mu/m/spl times/600-/spl mu/m PHEMTs exhibited extrapolated f/sub t/ and f/sub max/ of 70- and 150-GHz, respectively. At 10-GHz, 200-/spl mu/m devices yielded a low noise figure of 0.58-dB with very high associated gain. Furthermore, we have also demonstrated output power of 27-dBm, P.A.E. of 70.1%, and power gain of 13.2-dB at 9-GHz on a 1200-/spl mu/m gate width InGaP PHEMT. This is the first reported demonstration of excellent low-noise and power performance at microwave frequencies from PHEMT with an InGaP Schottky barrier.

Published in:

Microwave Symposium Digest, 1998 IEEE MTT-S International  (Volume:3 )

Date of Conference:

7-12 June 1998