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Enhancement of quantum efficiency in thin photodiodes through absorptive resonance

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2 Author(s)
A. Chin ; AT&T Bell Labs., Holmdel, NJ, USA ; T. Y. Chang

The spectral response of resonantly enhanced photodiodes is analyzed theoretically and verified experimentally. Comprehensive design guidelines and formulas are given for device structures containing a metal reflector, a contact layer, and optional grading layer, an absorbing layer, and a quarter-wave stack (QWS). The analysis shows, for instance, that the quantum efficiency of a Schottky photodiode with a 162-nm GaInAs absorbing layer can be enhanced 3.7-fold by using a 41-layer AlInAs/AlGaInAs QWS. The number of layers required could be much lower for other material systems and/or if the substrate is removed. Experimentally, 50% enhancement is demonstrated for a 475-nm-thick absorbing layer at 1.52 μm by using a 16-layer QWS. The resonance width is ~4.4%

Published in:

Journal of Lightwave Technology  (Volume:9 ,  Issue: 3 )