Referenced Items are not available for this document.
Low-frequency noise measurements in depletion-mode SIMOX MOSFETs are reported. A simple model provides a reliable interpretation of the low-frequency noise in multi-interface depletion-mode transistors. An experimental procedure to separate noise contributions of front and back interfaces from noise due to bulk carrier fluctuations is described. The noises generated in the thin Si film and at the two Si-SiO2 interfaces can be identified and characterized independently in terms of bulk properties and interface trap densities. Single-level traps at the back interface and defects in the volume are detected in high-temperature annealed materials
Published in:
Electron Devices, IEEE Transactions on
(Volume:38
,
Issue:
2
)
Date of Publication: Feb 1991
- Page(s):
- 323 - 327
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 3891193
- Digital Object Identifier :
- 10.1109/16.69913
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb 1991
- Sponsored by :
- IEEE Electron Devices Society
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