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Critical evaluation of uniformity and contamination in porous silicon SOI wafers

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6 Author(s)
Kelly, M.J. ; Sandia Nat. Lab., Albuquerque, NM, USA ; Guilinger, T.R. ; Tsao, Sylvia S. ; Chambers, W.B.
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Summary form only given. Three aspects of porous silicon (PS) formation that could affect its compatibility with VLSI manufacturing processes are evaluated: (1) chemical contamination, (2) particulate contamination, and (3) PS uniformity. Porous silicon anodization equipment and procedures developed to optimize the uniformity of porous silicon-based SOI wafers are also described. Inductively coupled plasma atomic emission spectroscopy and surface-scan measurements indicate there is no significant chemical or particle contamination associated with the porous silicon process

Published in:

SOS/SOI Technology Conference, 1989., 1989 IEEE

Date of Conference:

3-5 Oct 1989