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Preparation of LNBN thin films by RF sputtering and their dielectric properties

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3 Author(s)
Li, H.F. ; Xi''an Jiaotong Univ., China ; Meng, Z.Y. ; Huang, G.X.

(LaNa)0.5Bi2Nb2O9 (LNBN) thin films have been prepared by RF sputtering with substrate temperatures up to 450°C. The structural orientation of the annealed films versus substrate temperature is shown to be complex. The substrate temperature had a profound influence on the dielectric properties of the LNBN thin films. The LNBN thin films display a relaxation phase transition

Published in:
Electrical Insulation and Dielectric Phenomena, 1989. Annual Report., Conference on

Date of Conference: 29 Oct-2 Nov 1989

Page(s):
369 - 374
Meeting Date :
29 Oct 1989-02 Nov 1989
INSPEC Accession Number:
3695505
Conference Location :
Leesburg, VA
Digital Object Identifier :
10.1109/CEIDP.1989.69574

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