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Preparation of LNBN thin films by RF sputtering and their dielectric properties

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3 Author(s)
Li, H.F. ; Xi''an Jiaotong Univ., China ; Meng, Z.Y. ; Huang, G.X.

(LaNa)0.5Bi2Nb2O9 (LNBN) thin films have been prepared by RF sputtering with substrate temperatures up to 450°C. The structural orientation of the annealed films versus substrate temperature is shown to be complex. The substrate temperature had a profound influence on the dielectric properties of the LNBN thin films. The LNBN thin films display a relaxation phase transition

Published in:

Electrical Insulation and Dielectric Phenomena, 1989. Annual Report., Conference on

Date of Conference:

29 Oct-2 Nov 1989