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A 10 mW inductorless, broadband CMOS low noise amplifier for 900 MHz wireless communications

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3 Author(s)
Janssens, J. ; ESAT, Katholieke Univ., Leuven, Heverlee, Belgium ; Crols, J. ; Steyaert, M.

A low-power, broadband LNA has been integrated in a standard 0.5 μm CMOS process. The presented CMOS LNA offers a noise figure better than 3.3 dB up to 970 MHz while drawing only 3.4 mA from a 3.0 V supply. The circuit employs a topology without on-chip inductors and does not require any tuning or trimming to achieve the performance. The amplifier provides a gain of 14.8 dB in a 700 MHz wide band and has a gain of 9 dB at 900 MHz. The input IP3 is -4.7 dBm. The reverse isolation is higher than 41 dB, making it fit for insertion in a CMOS low-IF receiver

Published in:

Custom Integrated Circuits Conference, 1998. Proceedings of the IEEE 1998

Date of Conference:

11-14 May 1998