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Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K

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2 Author(s)
Laux, S.E. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Fischetti, M.V.

Monte Carlo simulation results for small silicon n-MOSFETs at 77 and 300 K are presented. A complete description of the silicon band structure including consistent scattering rates, electron-electron scattering, and plasma effects is included in the calculation for the first time. The dependence of transconductance on channel length is in excellent agreement with the experiments of G.A. Sai-Halasz et al. (see ibid., vol.EDL-8, p.463-6, Oct. 1987 and ibid., vol.EDL-9, p.464-6, Sep. 1988) and serves to support the expectation of significant velocity overshoot in these devices. For extremely short channels (>

Published in:

Electron Device Letters, IEEE  (Volume:9 ,  Issue: 9 )