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Feasibility of tera-bps smart pixel arrays using monolithic emitter-based optoelectronic VLSI circuits

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10 Author(s)
Ahadian, J.F. ; Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA ; Vaidyanathan, P.T. ; Patterson, S.G. ; Royter, Y.
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Epitaxy-on-electronics (EoE) optoelectronic integration technology is an economical GaAs VLSI process and monolithically integrates heterostructure devices such as emitters, detectors, or modulators to produce complex and manufacturable optoelectronic integrated circuits (OEICs). We explores EoE's short-term potential to produce 1 tera-bit/s/cm/sup 2/ smart pixel arrays. The issues of pixel density, processing complexity, electronic and optoelectronic bandwidth, and thermal management will be addressed in detail, along with the technical and economic advantages of using GaAs VLSI electronics rather than CMOS.

Published in:

Broadband Optical Networks and Technologies: An Emerging Reality/Optical MEMS/Smart Pixels/Organic Optics and Optoelectronics. 1998 IEEE/LEOS Summer Topical Meetings

Date of Conference:

20-24 July 1998