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Millimeter-wave GaAs power FET with a pulse-doped InGaAs channel

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4 Author(s)
Kim, Bumman ; Texas Instrum. Inc., Dallas, TX, USA ; Shih, H.-D. ; Wurtele, M. ; Tserng, H.Q.

Performance of a GaAs power MESFET has been improved significantly by incorporating a pulse-doped InGaAs layer in the GaAs n-channel. InGaAs provides electron transport properties superior to those of GaAs. The doping level of the GaAs layer can be very high, making it a very-high-transconductance device. Moreover, the conduction-band discontinuity at the heterointerface acts as a potential barrier for electron confinement; therefore, the power gain of the FET is significantly improved. The resulting device delivered a power density of 0.6 W/mm with 14% power-added efficiency and 3.5-dB gain at 60 GHz. At a gain of 5.1 dB, power density was 0.4 W/mm.<>

Published in:

Electron Device Letters, IEEE  (Volume:9 ,  Issue: 5 )