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Channel size dependence of dopant-induced threshold voltage fluctuation [deep submicron MOSFETs]

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1 Author(s)
Takeuchi, K. ; Silicon Syst. Res. Lab., NEC, Kanagawa, Japan

L and W dependence of dopant-induced V/sub TH/ fluctuation is analyzed using a newly proposed quasi-resistance method. It is revealed that the (LW)/sup -1/2/ relationship originates from a V/sub TH/ averaging effect, caused by the subthreshold current. The relationship is expected to hold down to 0.1 /spl mu/m generation.

Published in:

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Date of Conference:

9-11 June 1998