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A novel 6.4 /spl mu/m/sup 2/ full-CMOS SRAM cell with aspect ratio of 0.63 in a high-performance 0.25 /spl mu/m-generation CMOS technology

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7 Author(s)
Kim, K.J. ; Samsung Electron. Co. Ltd., Yongin-City, South Korea ; Youn, J.M. ; Kim, S.B. ; Kim, J.H.
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A unique 6.4 μm/sup 2/ 6Tr. SRAM cell has been developed using an advanced CMOS technology implemented in 0.25 μm design rule for high density and high speed applications. Very small aspect ratio of 0.63 has been achieved for the cell design. Special features in the layout are parallel active regions and orthogonal gate electrodes, all bar shape. Stable cell operation has been obtained at 0.5 V.

Published in:

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Date of Conference:

9-11 June 1998