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Browse Conference Publications > VLSI Technology, 1998. Digest ... Help

Dynamic stressing effects on reliability of strontium titanate (SrTiO/sub 3/) thin film capacitors for high-density memory applications

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8 Author(s)
Tung-Sheng Chen ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Balu, V. ; Katakam, S. ; Jian-Hung Lee
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High dielectric constant SrTiO/sub 3/ films (/spl epsiv/=237 or C=70 fF//spl mu/m/sup 2/ measured at 100 kHz) have been fabricated and the dynamic stressing characteristics of these dielectrics has been studied for the first time. Time-dependent dielectric breakdown (TDDB) of SrTiO/sub 3/ is shown to be strongly dependent on frequency and duty cycle under dynamic stressing. On the other hand, dielectric dispersion does not exhibit significant dependence on pulse width or on-time of the stressing signal.

Published in:
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Date of Conference: 9-11 June 1998

Page(s):
54 - 55
Meeting Date :
09 Jun 1998-11 Jun 1998
Print ISBN:
0-7803-4770-6
INSPEC Accession Number:
6118157
Conference Location :
Honolulu, HI, USA
Digital Object Identifier :
10.1109/VLSIT.1998.689196
Product Type:
Conference Publications

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