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A Cu/low-/spl kappa/ dual damascene interconnect for high performance and low cost integrated circuits

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26 Author(s)
Zhao, B. ; Semicond. Syst., Rockwell Int. Corp., Newport Beach, CA, USA ; Feiler, D. ; Ramanathan, V. ; Liu, Q.Z.
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Copper and a low dielectric constant (low-/spl kappa/) material have been successfully integrated in a dual damascene interconnect architecture. The low-/spl kappa/ material (/spl kappa/=2.2) was used as intra-level dielectric and inter-level dielectric, which has led to significant reduction in both intra-level and inter-level capacitance. In addition, low Cu wiring resistance and low Cu via resistance have been achieved in the dual damascene interconnect which offers process simplification and low cost.

Published in:

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Date of Conference:

9-11 June 1998