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A high-performance sub-0.25 /spl mu/m CMOS technology with multiple thresholds and copper interconnects

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29 Author(s)
L. Su ; Semicond. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY, USA ; R. Schulz ; J. Adkisson ; K. Beyer
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A sub-0.25 /spl mu/m technology in manufacturing that is targeted for high-performance CMOS applications is discussed. Aggressive groundrule scaling including SRAM cell size down to 5.4 /spl mu/m/sup 2/ is combined with multiple threshold voltage devices and the first technology in the industry to offer copper interconnects. These features result in minimum unloaded inverter delay of 12.7 ps and enable microprocessor frequencies above 480 MHz.

Published in:

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Date of Conference:

9-11 June 1998