Skip to Main Content
A 900 MHz Low Noise Amplifier (LNA) has been developed using 0.35 /spl mu/m standard CMOS technology. MA-MOS (Mesh-Arrayed MOSFET) is introduced for excellent high-frequency performance without salicide technology. The substrate power loss was analyzed and minimized by reducing parasitic elements for a low-noise and low-power operation. As a result, the LNA realized a minimum noise figure (NFmin) of 1.8 dB, a forward gain of 14.8 dB and IIP3 of -2.5 dBm with a low-power consumption of only 9 mW from a 3 V power supply.