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Non-precharged bit-line sensing scheme for high-speed low-power DRAMs

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10 Author(s)
Kato, Y. ; Fujitsu VLSI Ltd., Kasugai, Japan ; Nakaya, N. ; Maeda, T. ; Higashiho, M.
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Various proposals have been made and implemented for improving the bandwidth of the DRAM Input/Output interface. However, random access speed, which has limited DRAM total performance, has not been improved enough. Some proposals have been made to improve it, such as over-driving the power supply voltage for sense amplifiers, and amplifying the signal on bit-lines. These schemes, however, have suffered from increased power dissipation. This paper proposes a Non-Precharged Bit-line Sensing (NPBS) scheme in which data access is performed without precharging bit-lines. This realizes both an improvement of random access speed and a reduction of power dissipation. Also, we propose a power reduction scheme for the memory system named Initial Same Data Write (ISDW). In combination with the NPBS, the power is effectively reduced when part of a memory system is not used.

Published in:

VLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on

Date of Conference:

11-13 June 1998

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