Cart (Loading....) | Create Account
Close category search window
 

Effect of the (101¯0) crystal orientation on the optical gain of wurtzite GaN-AlGaN quantum-well lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yeo, Y.C. ; Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore ; Chong, T.C. ; Li, M.-F.

We analyze the valence subband structures of (101¯0)oriented wurtzite (WZ) GaN-AlGaN quantum wells (QWs) using the multiband effective-mass theory and calculate the optical gain taking into account the subband structure modification due to the crystal orientation effect and the pseudomorphic strain which is anisotropic in the QW plane. We show that, for the (101¯0) GaN/AlGaN QW, the two topmost subbands, Y'1 and X'1, are more widely separated than the HH1 and LH1 subbands in the (0001) GaN-AlGaN QW. The in-plane energy dispersion of the (101¯0) QW also becomes anisotropic, giving a reduced band-edge density-of-states in comparison with the (0001) QW. Moreover, states constituting the topmost valence subband at the Γ point and along k-x, are predominantly |Y'⟩-like. A combination of the reduced band-edge density-of-states and the existence of the preferred symmetry at the valence band maximum contributes to an improvement of the y'-polarized TE optical gain. A comparison of the QWs of both orientations reveals that the (101¯0) QW is capable of achieving lower transparency current densities. Thus, the (101¯0) QW could be useful in improving the threshold performance of WZ GaN-based QW lasers

Published in:

Quantum Electronics, IEEE Journal of  (Volume:34 ,  Issue: 7 )

Date of Publication:

Jul 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.