By Topic

Carrier diffusion effect in tapered semiconductor-laser amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Jie-Wei Lai ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Ching-Fuh Lin

This paper proposes a theoretical model to study the beam amplification and the influence of the lateral drift and diffusion on the tapered semiconductor-laser amplifier in great detail. The overall effect of the lateral drift and diffusion could be represented by an effective diffusion coefficient. The analysis, which treats the effective diffusion coefficient as a controllable parameter, shows that both the beam quality and optoelectrical property can be improved using a large effective diffusion coefficient. The analysis also indicates that the effective diffusion in the separate-confinement heterostructure layer could affect the beam quality in the quantum-well amplifiers. In addition, the thermal effect on the device performance is studied and its influence is found to be extremely significant for the high-diffusion cases

Published in:

IEEE Journal of Quantum Electronics  (Volume:34 ,  Issue: 7 )