Cart (Loading....) | Create Account
Close category search window
 

Interdiffused AlGaAs-GaAs quantum well for improved electroabsorptive modulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Choy, Wallace C.H. ; Sch. of Electron. Eng., Inf. & Technol., Surrey Univ., Guildford, UK ; Li, E.H.

This is a theoretical study of the effects of two as-grown structural parameters on the modulation properties of AlxGa 1-xAs-GaAs quantum wells (QWs), which are the Al concentration in barrier and the thickness of the well layer serving as initial conditions before interdiffusion. The results show that, with a larger Al concentration and a wider well width, the range of interdiffusion for an enhanced electroabsorption (EA) change increases with both of these parameters, while insertion loss increases with the former and decreases with the latter. However, the increase in loss is lower than that of the rectangular QW for the same magnitude of absorption change. The range of a tunable absorption-peak wavelength produced by interdiffusion increases with increasing Al concentration and decreases with increasing well width. Moreover, in a moderately interdiffused QW, the required bias reduces for the same level of EA modulation. For the best device operation, interdiffused QWs with the Al concentration between 0.3 and 0.4 and well width between 10 and 12 nm are most suitable for developing a general-purpose electroabsorptive modulator. When applied in high-speed modulators, the EA of a wide and shallow QW active-region structure can be further enhanced by the use of corresponding interdiffusion

Published in:

Quantum Electronics, IEEE Journal of  (Volume:34 ,  Issue: 7 )

Date of Publication:

Jul 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.