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Symmetrical Large-Signal Modeling of Microwave Switch FETs

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5 Author(s)
Prasad, A. ; Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden ; Fager, C. ; Thorsell, M. ; Andersson, C.M.
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This paper presents a new symmetrical field-effect transistor (FET) model suitable for microwave switches. The model takes advantage of the inherent symmetry of typical switch devices, justifying a new small-signal model where all intrinsic model parameters can be mirrored between the positive and negative drain-source bias regions. This small-signal model is utilized in a new and simplified approach to large-signal modeling of these type of devices. It is shown that the proposed large-signal model only needs a single charge expression to model all intrinsic capacitances. For validation of the proposed model, small-signal measurements from 100 MHz to 50 GHz and large-signal measurements at 600 MHz and 16 GHz, are carried out on a GaAs pHEMT. Good agreement between the model and the measurements is observed under both small- and large-signal conditions with particularly accurate prediction of higher harmonic content. The reduced measurement requirements and complexity of the symmetrical model demonstrates its advantages. Further, supporting operation in the negative drain-source voltage region, the model is robust and applicable to a variety of circuits, e.g., switches, resistive mixers, oscillators, etc.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:62 ,  Issue: 8 )