By Topic

Toward a very low-power integrated charge preamplifier by using III-V field effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
G. De Geronimo ; Instrum. Div., Brookhaven Nat. Lab., Upton, NY, USA ; A. Longoni

The future high-energy physics experiments, based on the new high-luminosity accelerators, will require a new generation of front-end monolithic electronics characterized, in particular, by high speed and low-power dissipation. In this perspective, the performances of Si and GaAs field effect transistors (FET's) are compared here in conditions of low-power dissipation. The advantages of solutions based on GaAs FET's, in applications requiring fast shaping times, are presented and experimental results are reported. The criteria for the optimum choice of the input transistor dimension and of its bias point are discussed

Published in:

IEEE Transactions on Nuclear Science  (Volume:45 ,  Issue: 3 )