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Charge-enhancement mechanisms of GaAs field-effect transistors: Experiment and simulation

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7 Author(s)
McMorrow, D. ; Naval Res. Lab., Washington, DC, USA ; Melinger, J.S. ; Knudson, A.R. ; Buchner, S.
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The charge-collection processes of GaAs field-effect transistors are investigated as a function of the incident laser pulse energy via time-resolved charge-collection measurements and by two-dimensional computer simulation. The measurements and simulations reveal a feature that persists on a time scale of 100 ps, the amplitude of which varies strongly with the injected carrier density (pulse energy). The appearance of this feature is associated with a barrier lowering effect at the source/substrate junction, coupled with the drift-assisted transport of electrons through the substrate to the drain contact. This behavior is similar, but not identical to bipolar-gain models that have been suggested previously. We introduce the concept of ion-track segments and illustrate their utility in interrogating the complex mechanisms of charge collection and enhancement in GaAs FETs

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Nuclear Science, IEEE Transactions on  (Volume:45 ,  Issue: 3 )