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Insulator photocurrents: application to dose rate hardening of CMOS/SOI integrated circuits

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4 Author(s)
Dupont-Nivet, E. ; CEA, Bruyeres-le-Chatel, France ; Cole, Y.M. ; Flament, O. ; Tinel, F.

Irradiation of insulators with a pulse of high energy x-rays can induce photocurrents in the interconnections of integrated circuits. We present, here, a new method to measure and analyse this effect together with a simple model. We also demonstrate that these insulator photocurrents have to be taken into account to obtain high levels of dose-rate hardness with CMOS on SOI integrated circuits, especially flip-flops or memory blocks of ASICs. We show that it explains some of the upsets observed in a SRAM embedded in an ASIC

Published in:

Nuclear Science, IEEE Transactions on  (Volume:45 ,  Issue: 3 )

Date of Publication:

Jun 1998

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