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Irradiation effects in ultrathin Si/SiO2 structures

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3 Author(s)
J. L. Cantin ; Groupe de Phys. des Solides, CNRS, Paris, France ; H. J. von Bardeleben ; J. L. Autran

The total dose response of Si/SiO2 structures with ultrathin (20-40 Å) thermal oxide layers grown porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function of dose for three series of samples with different initial hydrogen passivation states

Published in:

IEEE Transactions on Nuclear Science  (Volume:45 ,  Issue: 3 )